APTGF350DA60 APTGF350DA60 ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 1-6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 430 i c continuous collector current t c = 80c 350 i cm pulsed collector current t c = 25c 1225 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1562 w rbsoa reverse bias safe operating area t j = 150c 1225a @ 600v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. vbus out 0/vbus g2 e2 v ces = 600v i c = 350a @ tc = 80c application ac and dc motor control switched mode power supplies power factor correction features non punch through (npt) thunderbolt igbt ? - low voltage drop - low tail current - switching frequency up to 100 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated kelvin emitter for easy drive very low stray inductance - symmetrical design - m5 power connectors high level of integration benefits outstanding performance at high frequency operation stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance easy paralleling due to positive tc of vcesat low p rofile boost chopper npt igbt power module
APTGF350DA60 APTGF350DA60 ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 200a 600 v t j = 25c 200 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 4000 a t j = 25c 2.0 2.5 v ce(on) collector emitter on voltage v ge =15v i c = 360a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 4ma 3 5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 300 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 17.2 c oes output capacitance 1.88 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 1.6 nf q g total gate charge 1320 q ge gate ? emitter charge 1160 q gc gate ? collector charge v gs = 15v v bus = 300v i c = 360a 800 nc t d(on) turn-on delay time 26 t r rise time 25 t d(off) turn-off delay time 150 t f fall time 30 ns e on turn-on switching energy 13.5 e off turn-off switching energy inductive switching (25c) v ge = 15v v bus = 400v i c = 360a r g = 1.25 11.5 mj t d(on) turn-on delay time 26 t r rise time 25 t d(off) turn-off delay time 170 t f fall time 40 ns e on turn-on switching energy 17.2 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 400v i c = 360a r g = 1.25 14 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle tc = 80c 400 a i f = 400a 1.6 1.8 i f = 800a 1.9 v f diode forward voltage i f = 400a t j = 125c 1.4 v t j = 25c 180 t rr reverse recovery time i f = 400a v r = 400v di/dt =800a/s t j = 125c 220 ns t j = 25c 1560 q rr reverse recovery charge i f = 400a v r = 400v di/dt =800a/s t j = 100c 5800 nc e on includes diode reverse recovery in accordance with jedec standard jesd24-1
APTGF350DA60 APTGF350DA60 ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 3-6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.08 r thjc junction to case diode 0.16 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline
APTGF350DA60 APTGF350DA60 ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 4-6 typical performance curve output characteristics (v ge =15v) t j =-55c t j =25c t j =125c 0 200 400 600 800 1000 1200 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =-55c t j =25c t j =125c 0 200 400 600 800 1000 1200 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=720a ic=360a ic=180a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=720a ic=360a ic=180a 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 160 320 480 640 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 200 400 600 800 1000 1200 1400 gate charge (nc) v ge , gate to emitter voltage (v) i c = 360a t j = 25c output characteristics (v ge =10v) t j =-55c t j =25c t j =125c 0 200 400 600 800 1000 1200 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle
APTGF350DA60 APTGF350DA60 ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 5-6 v ge = 15v 15 20 25 30 35 100 200 300 400 500 600 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 25c v ce = 400v r g = 1.25 ? v ge =15v, t j =25c v ge =15v, t j =125c 50 100 150 200 250 100 200 300 400 500 600 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 1.25 ? v ge =15v, t j =125c 0 20 40 60 80 100 200 300 400 500 600 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 1.25 ? t j = 25c t j = 125c 0 20 40 60 80 100 200 300 400 500 600 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 1.25 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 8 16 24 32 100 200 300 400 500 600 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v r g = 1.25 ? t j = 25c t j = 125c 0 4 8 12 16 20 24 100 200 300 400 500 600 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 1.25 ? eon, 720a eoff, 720a eon, 360a eoff, 360a eon, 180a eoff, 180a 0 16 32 48 64 024681012 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c eon, 720a eoff, 720a eon, 360a eoff, 360a eon, 180a eoff, 180a 0 8 16 24 32 40 0 255075100125 t j , junction temperature (c) switching energy losses (mj) switching energy losses vs junction temp. v ce = 400v v ge = 15v r g = 1.25 ?
APTGF350DA60 APTGF350DA60 ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 6-6 cies cres coes 100 1000 10000 100000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0 200 400 600 800 1000 1200 1400 0 200 400 600 800 i c , collector current (a) minimum switching safe operating area v ce , collector to emitter voltage (v) 0.9 0.175 0.125 0.075 0.025 0.0125 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current 0 20 40 60 80 100 120 140 160 180 50 100 150 200 250 300 350 400 450 i c , collector current (a) f max , operating frequency (khz) v ce = 400v d = 50% r g = 1.25 ? t j = 125c apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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